Electrooptic device

ABSTRACT

An electrooptic device having a simple structure that can efficiently increase deflection of a beam is provided. The device includes: an electrooptic crystal ( 11 ) having an electrooptic effect; an electrode pair of a positive electrode ( 12 ) and a negative electrode ( 13 ) for generating an electric field inside the electrooptic crystal; and a power source for applying a voltage between the electrode pair so as to generate a space charge inside the electrooptic crystal. With this arrangement, by using a simple structure, a change in a deflection angle is temporally rapid, and a large deflection angle that can not be obtained by a conventional electrooptic crystal prism can be acquired at a low applied voltage.

TECHNICAL FIELD

The present invention relates to an electrooptic device, and moreparticularly relates to an electrooptic device that changes therefractive index of an electrooptic crystal by controlling the electricfield of the crystal, so that the forwarding direction of light can bechanged, or the phase of light can be changed.

BACKGROUND ART

At present, requests for an optical control device that deflects a laserbeam have increased for video apparatuses, such as projectors, laserprinters, confocal microscopes having a high resolution, barcodereaders, etc. As optical deflection techniques, a technique for rotatinga polygon mirror, a technique for employing a galvano mirror to controlthe deflected direction of light, a diffraction technique that employsthe acousto-optic effect, and a micro machine technique called the MEMS(Micro Electro Mechanical System) have been proposed.

As for a polygon mirror, a mirror having the shape of a polyhedron ismechanically rotated, and the reflection direction of a laser beam issequentially changed to deflect light. Since a method employing apolygon mirror utilizes mechanical rotations, the rotational speed islimited. That is, the acquisition of revolutions equal to or greaterthan 10000 rpm is difficult for a polygon mirror, and there is a faultin that a polygon mirror is not appropriate for an application requiredfor a rapid operation. A method employing a polygon mirror has beenutilized for the deflection of the laser beam of a laser printer.However, the limit imposed by the rotational speed of a polygon mirroris a bottleneck when it comes to increasing the printing speed of aprinter. In order to further increase the printing speed of a printer, afaster optical deflection technique is required.

A galvano mirror is employed for a laser scanner, etc., that deflectsand scans a laser beam. A conventional practical galvano mirror has, forexample, a magnetic path formed by a moving iron core, which is usedinstead of a moving coil arranged in a magnetic field, and a magneticmember, around which two permanent magnets and four magnetic poles arearranged.

When the magnetic fluxes between the magnetic poles are changed by themagnitude and the direction of a current that flows across a drive coilthat is wound around the magnetic member, a reflecting mirror is movedvia the moving iron core and the laser beam is deflected and scanned.The method employing a galvano mirror can perform a rapid operation.However, since the drive coil of a conventional galvano mirror isprovided by a machine winding, downsizing is difficult. Therefore, it isdifficult for the sizes of a laser scanning system employing a galvanomirror and a laser application apparatus that employs this system to befurther reduced. Furthermore, there is a fault that power consumption islarge. There is another fault in that a rapid operation can not beperformed within a cycle of the MHz unit.

An optical deflector of an optical diffraction type that employs theacousto-optic effect has been put to practical use. However, a methodemploying this optical deflector of an optical diffraction type consumesa large amount of power and downsizing is difficult. Further, there is afault in that it is difficult to obtain a large deflection angle and toperform a rapid operation. In addition, since a method employing theMEMS electrostatically drives a fine mirror as an optical deflectiondevice, several tens of μm is the limit placed on the response.

Conventionally, various optical function parts employing an electroopticcrystal have been put to practical use. These optical function partsemploy a phenomenon such that, upon the application of a voltage to anelectrooptic crystal, the refractive index of the crystal is changed bythe electrooptic effect. Thus, as means for solving the above describedproblems, a technique has been developed whereby a voltage is applied tothe electrodes of an electrooptic crystal, and a beam is deflected bythe electrooptic effect (see, for example, patent document 1).Furthermore, a technique has been developed whereby a beam is deflectedusing an electrooptic crystal that is processed in a prism shape, or anelectrooptic crystal wherein electrodes having a prism shape are formed(see, for example, patent document 2). When a voltage is applied to theelectrodes of the electrooptic crystal, the refractive index can bechanged because of the electrooptic effect. By using the method thatemploys electrodes shaped like a prism, an area where the refractiveindex is changed and an area where a voltage is not applied, and arefractive index is not changed, are produced in the electroopticcrystal. Due to a refractive index difference at the boundary of the twoareas, a beam is deflected, and a deflection angle is obtained.

By using the method employing the electrooptic crystal, a response up tothe speed limit of the electrooptic effect is available, and a responseexceeding one GHz can be obtained.

In the past, reports of using LiNbO₃ (hereinafter referred to as an LNcrystal) and PLZT were submitted as optical deflection devices employingan electrooptic crystal. However, since a device employing the LNcrystal produces only a small electrooptic effect, there is a fault inthat only a deflection angle of about 3 mrad is obtained by applying avoltage of about 5 kV/mm. Further, also for a device using PLZT, adeflection angle of about 45 mrad is the limit, relative to theapplication of an electric field of 20 kV/mm (see, for example,non-patent document 1).

However, according to the conventional method, there is only a smallchange of the refractive index in each prism area due to theelectrooptic effect, and the deflection angle due to the refractiveindex change is also small. Therefore, in order to obtain a largedeflection angle, a plurality of prisms must be arranged for theconventional method. However, in a case wherein a plurality of prismsare arranged, there is a problem in that, when light enters the prismsat a large incident angle, a desired resolution can not be obtained.

On the other hand, an optical phase modulator employing an electroopticcrystal changes the refractive index of the crystal to change the speedat which light passes through the crystal, and to change the phase ofthe light. Further, when the electrooptic crystal is located on one ofthe optical waveguide paths of a Mach-Zehnder interferometer and aMichelson interferometer, the light intensity of the output of theinterferometer is changed in accordance with a voltage applied to thecrystal. These interferometers can be employed as optical switches oroptical modulators.

FIG. 1 shows the structure of a conventional optical phase modulatoremploying an electrooptic crystal. In the optical phase modulator, apositive electrode 2 and a negative electrode 3 are formed on oppositefaces of the block of an electrooptic crystal 1. The crystal axes x, yand z of the electrooptic crystal 1 are defined as shown in FIG. 1. Thechange in the refractive index due to the electrooptic effect isprovided by the linear Pockels effect and the quadratic Kerr effect.

In the case of the quadratic Kerr effect, s₁₁ is an electroopticconstant for vertically polarized light, i.e., for the polarizationdirection relative to the x axial direction in FIG. 1. The change in aphase when a voltage V is applied between the positive electrode 2 andthe negative electrode 3 is provided by the following expression.

$\begin{matrix}\left\lbrack {{Expression}\mspace{14mu} 1} \right\rbrack & \; \\{\varphi_{x} = {\frac{\pi \; n^{3}{Ls}_{11}}{\lambda}\left( \frac{V}{d} \right)^{2}}} & (1)\end{matrix}$

Here, n denotes the refractive index of the electrooptic crystal 1, Ldenotes a light propagation direction, i.e., the length of theelectrooptic crystal 1 in the z axial direction in FIG. 1, λ denotes thewavelength of light, and d denotes the interval between the positiveelectrode 2 and the negative electrode 3. s₁₂ is an electroopticconstant for horizontally polarized light, i.e., for a polarizationdirection relative to the y axial direction in FIG. 1, and the change ina phase when a voltage V is applied between the positive electrode 2 andthe negative electrode 3 is obtained by using the following expression.

$\begin{matrix}\left\lbrack {{Expression}\mspace{14mu} 2} \right\rbrack & \; \\{\varphi_{y} = {\frac{\pi \; n^{3}{Ls}_{12}}{\lambda}\left( \frac{V}{d} \right)^{2}}} & (2)\end{matrix}$

A half-wave voltage is employed as an index that represents theefficiency of the optical phase modulator. A half-wave voltage is avoltage that is required to change the phase of light by π radian, andis provided by the following expression.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 3} \right\rbrack \mspace{596mu}} & \; \\{V_{\pi} = \sqrt{\frac{\lambda \; d^{2}}{n^{3}{Ls}_{ij}}}} & (3)\end{matrix}$

Next, an explanation will be given for a light intensity modulator thatis constituted by combining an optical phase modulator, a polarizer andan analyzer. FIGS. 2A and 2B show the structure of a conventional lightintensity modulator. As shown in FIG. 2A, a positive electrode 2 and anegative electrode 3 are formed on opposite faces of an electroopticcrystal 1. A polarizer 4 is located on the incidence side of theelectrooptic crystal 1, and an analyzer 5 is located on the emittanceside. Of the field elements of light that is passed through thepolarizer 4, the element parallel to the x axis is defined as Ex, andthe element parallel to the y axis is defined as Ey. In a case whereinthe polarization angle of the polarizer 4 is 45 degrees relative to thex axis of the electrooptic crystal 1, Ex=Ey.

The changes in the phases of Ex and Ey upon the application of a voltageV between the positive electrode 2 and the negative electrode 3 arerespectively obtained by expressions (1) and (2). In a case wherein thepolarization angle of the analyzer 5 is 45 degrees relative to the xaxis of the electrooptic crystal 1, the intensity of the output lightthat is passed through the analyzer 5 is provided by the followingexpression.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 4} \right\rbrack \mspace{596mu}} & \; \\\begin{matrix}{I = {{{\frac{E_{x}}{\sqrt{2}}^{{j\varphi}_{x}}} + {\frac{E_{y}}{\sqrt{2}}^{{j\varphi}_{yx}}}}}^{2}} \\{= {\frac{E_{x}^{2}}{2} + \frac{E_{y}^{2}}{2} + {E_{x}E_{y}{\cos \left( {\varphi_{x} - \varphi_{y}} \right)}}}} \\{= {\frac{E_{x}^{2}}{2} + \frac{E_{y}^{2}}{2} + {E_{x}E_{y}\cos \left\{ {\frac{\pi \; n^{3}L}{\lambda}\left( {s_{11} - s_{12}} \right)\left( \frac{V}{d} \right)^{2}} \right\}}}}\end{matrix} & (4)\end{matrix}$

In a case wherein Ex and Ey are equal,

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 5} \right\rbrack \mspace{619mu}} & \; \\{E_{x} = {E_{y} = \frac{E}{\sqrt{2}}}} & \;\end{matrix}$

is employed, and the light intensity is provided by the followingexpression.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 6} \right\rbrack \mspace{596mu}} & \; \\\begin{matrix}{I = {\frac{E^{2}}{2}\left\lbrack {1 + {2\; \cos \left\{ {\frac{\pi \; n^{3}L}{\lambda}\left( {s_{11} - s_{12}} \right)\left( \frac{V}{d} \right)^{2}} \right\}}} \right\rbrack}} \\{= {E^{2}\sin^{2}\left\{ {\frac{\pi \; n^{3}L}{\lambda}\left( {s_{11} - s_{12}} \right)\left( \frac{V}{d} \right)^{2}} \right\}}}\end{matrix} & (5)\end{matrix}$

In this manner, as shown in FIG. 2B, the intensity of the output lightthat is passed through the analyzer 5 can be modulated between 0% to100%, in accordance with the voltage V. As an index that indicates theefficiency of the light intensity modulator, a semi-half voltage thatchanges the intensity of the output light from 0% to 100% is representedby the following expression.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 7} \right\rbrack \mspace{596mu}} & \; \\{V_{\pi} = \sqrt{\frac{\lambda \; d^{2}}{n^{3}{L\left( {s_{11} - s_{12}} \right)}}}} & (6)\end{matrix}$

However, since the conventional electrooptic crystal has only a smallelectrooptic constant, in order to constitute an optical phase modulatorand a light intensity modulator for practical use, a half-wave voltageof a kV order must be employed. Since a great load is imposed on a drivecircuit for fast modulation of the voltage of a kV order, there is aproblem in that increasing the size of an apparatus can not be avoided.Further, there is also a problem in that, when a voltage of a kV orderis modulated at a high speed, high frequency noise occurs, and willenter a peripheral device.

One objective of the present invention is to provide an electroopticdevice having a simple arrangement that can efficiently increase thedeflection of abeam. Further, another objective of the present inventionis to provide an electrooptic device having a simple arrangement thatcan efficiently modulate the phase of light.

Patent Document 1: Japanese Patent Laid-Open No. Hei 10-239717

Patent Document 2: Japanese Patent Laid-Open No. Hei 09-159950

Non-Patent Document 1: Akio Sugama, et al., “Development of EO waveguidePath Deflection Optical Switch”, Technical Report of The Institute ofElectronics, Information and Communication Engineers, PN2004-59, p. 61to 64, published October, 2004 by the Institute of Electronics,Information and Communication Engineers Association.

Non-Patent Document 2: Toshihiro Itoh, Masahiro Sasaura, Seiji Toyoda,Katsue Manabe, Koichiro Nakamura and Kazuo Fujiura, “High-frequencyresponse of electro-optic single crystal KTaxNbl-xO3 in paraelectricphase,” in Conference on Lasers and Electro-Optics/Quantum Electronicsand Laser Science and Photonic Applications, Systems and Technologies2005 (Optical Society of America, Washington, D.C., 2005), JTuC 36

Non-Patent Document 3: P. S. Chen, et. al., “Light Modulation and BeamDeflection with Potassium Tantalate-Niobate Crystals,” Journal ofApplied Physics, 1966, Vol. 37, no. 1, pp. 388-398

DISCLOSURE OF THE INVENTION

According to an electrooptic device for the present invention, a spacecharge is generated inside an electrooptic crystal by applying a voltageto the electrooptic crystal, and a tilt of the electric field isproduced in cross section relative to the light axis of a beam thatenters. When the tilt of the electric field is controlled, beamdeflection by an optical deflector can be increased. Further, when beamdeflection is reduced, and the angle of shifting between verticallypolarized light and horizontally polarized light is reduced, an opticalphase modulator can efficiently perform optical phase modulation.

In order to achieve the above described objectives, an embodiment of thepresent invention is an electrooptic device comprises an electroopticcrystal having an electrooptic effect; a electrode pair of a positiveelectrode and a negative electrode, for generating an electric fieldinside the electrooptic crystal; and a power source for applying avoltage to the electrode pair so as to generate a space charge insidethe electrooptic crystal.

Another embodiment of the present invention is a beam deflectorcomprises an electrooptic crystal having an electrooptic effect; and anelectrode pair of a positive electrode and a negative electrode, whichare formed of a material that serves as an ohmic contact relative to acarrier that contributes to electrical conduction of the electroopticcrystal, and which generate an electric field inside the electroopticcrystal.

An additional embodiment of the present invention is a light intensitymodulator comprises an electrooptic crystal having an electroopticeffect; a polarizer arranged on an incident-side light axis of theelectrooptic crystal; an analyzer arranged on an emittance-side lightaxis of the electrooptic crystal; and an electrode pair of a positiveelectrode and a negative electrode, which are formed of a material thatserves as a Schottky contact relative to a carrier that contributes toelectrical conduction by the electrooptic crystal, and which generate anelectric field inside the electrooptic crystal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating the structure of a conventional opticalphase modulator employing an electrooptic crystal;

FIG. 2A is a diagram illustrating the structure of a conventional lightintensity modulator;

FIG. 2B is a perspective view of the structure of the conventional lightintensity modulator;

FIG. 3 is a graph showing the operational characteristics of a lightintensity modulator for electrode material Pt;

FIG. 4 is a graph showing the operational characteristics of a lightintensity modulator for electrode material Ti;

FIG. 5 is a diagram illustrating a case wherein a change in a refractiveindex is tilted for a light intensity modulator;

FIG. 6A is a diagram showing the principle for the occurrence of thetilt of an electric field due to charges inside a crystal;

FIG. 6 b is a diagram showing the principle for the occurrence of thetilt of an electric field due to charges inside a crystal;

FIG. 7 is a diagram showing the principle of deflection of light due toa field tilt;

FIG. 8 is a graph showing a relationship between x₀ and a spacedistribution for an electric field E;

FIG. 9 is a graph showing a distribution of a refractive index change Δndue to the Kerr effect;

FIG. 10 is a graph showing a relationship between the work function ofan electrode material and a deflection angle;

FIG. 11 is a graph showing a relationship between the work function ofan electrode material and a shift angle;

FIG. 12 is a graph showing a relationship between the relativepermittivity of an electrooptic crystal and a deflection angle;

FIG. 13 is a graph showing the relative permittivity dependency of adeflection angle when an electric field to be applied is changed;

FIG. 14 is a graph showing the deflection angle of an electroopticdevice according to one mode of the present invention and the deflectionangle of a conventional prism.

FIG. 15 is a diagram illustrating an electrooptic device of aparallel-plate electrode type according to embodiment 1 of the presentinvention;

FIG. 16 is a graph showing a relationship between the deflection angleof a deflected beam and an applied voltage;

FIG. 17 is a graph showing a relationship between a current, which isflowing across an electrooptic crystal according to embodiment 1 of thepresent invention, and an applied voltage;

FIG. 18 is a diagram illustrating an electrooptic device of a horizontalelectrode type according to embodiment 2 of the present invention;

FIG. 19 is a graph showing a relationship between a current, which isflowing across a KLTN crystal according to the embodiment 2 of thepresent invention, and an applied voltage;

FIG. 20 is a diagram illustrating a light beam deflector according toembodiment 3 of the present invention;

FIG. 21 is a graph showing a distribution of a change in the refractiveindex of the light beam deflector according to embodiment 3 of thepresent invention;

FIG. 22 is a diagram illustrating the structure of a light intensitymodulator according to embodiment 4 of the present invention;

FIG. 23A is a diagram illustrating the structure of a beam deflectoraccording to embodiment 5 of the present invention;

FIG. 23B is a diagram showing a beam propagation path for the beamdeflector according to embodiment 5;

FIG. 24 is a graph showing a relationship between a voltage, applied bythe beam deflector according to the embodiment 5, and a deflectionangle;

FIG. 25A is a diagram illustrating the structure of a beam deflectoraccording to embodiment 6 of the present invention;

FIG. 25B is a diagram showing a beam propagation path for the beamdeflector according to embodiment 6;

FIG. 26 is a diagram illustrating the structure of a beam deflectoraccording to embodiment 7 of the present invention;

FIG. 27 is a diagram illustrating the structure of a two-dimensionalbeam deflector according to embodiment 8 of the present invention;

FIG. 28 is a diagram illustrating a two-dimensional beam deflectoraccording to embodiment 9 of the present invention;

FIG. 29A is a perspective view of the structure of a two-dimensionalbeam deflector according to embodiment 10 of the present invention;

FIG. 29B is a top view of the structure of the two-dimensional beamdeflector according to embodiment 10 of the present invention;

FIG. 29C is a side view of the structure of the two-dimensional beamdeflector according to embodiment 10 of the present invention;

FIG. 30 is a diagram illustrating the structure of an optical pickupapparatus according to embodiment 11 of the present invention;

FIG. 31A is a diagram illustrating the structure of a laser printeraccording to embodiment 12 of the present invention; and

FIG. 31B is a diagram illustrating the structure of a conventional laserprinter provided for a comparison.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will now be described in detailwhile referring to the drawings.

(Material for an Electrooptic Crystal)

It is preferable that an electrooptic crystal that has a large Pockelsconstant r_(ij), which is a linear electrooptic constant, or a largeKerr constant s_(ij), which is a quadratic electrooptic constant, beemployed in order to efficiently increase beam deflection andefficiently perform phase modulation. Such an electrooptic crystalhaving a large electrooptic constant can, for example, be a KLTN crystalhaving a ferroelectric phase that has a large Pockels effect r_(ij) or aKLTN crystal having a paraelectric phase that has a large Kerr constants_(ij). The KLTN crystal is a crystal represented asK_(1-x)Li_(y)Ta_(1-x)Nb_(x)O₃ (0<x<1, 0<y<1).

Other electrooptic crystals having a large electrooptic constant areelectrooptic crystals of LiNbO₃ (hereinafter referred to as LN), LiTaO₃,LiIO₃, KNbO₃, KTiOPO₄, BaTiO₃, SrTiO₃, Ba_(1-x)Sr_(x)TiO₃ (0<x<1),Ba_(1-x)Sr_(x)Nb₂O₆ (0<x<1), Sr_(0.75)Ba_(0.25)Nb₂O₆,Pb_(1-y)La_(y)Ti_(1-x)Zr_(x)O₃ (0<x<1, 0<y<1),Pb(Mg_(1/3)Nb_(2/3))O₃—PbTiO₃, KH₂PO₄, KD₂PO₄, (NH₄)H₂PO₄, BaB₂O₄,LiB₃O₅, CsLiB₆O₁₀, GaAs, CdTe, GaP, ZnS, ZnSe, ZnTe, CdS, CdSe and ZnO.

An explanation will be given for a case wherein an KLTN crystal isemployed for an electrooptic crystal 1 of a light intensity modulatorshown in FIG. 2B. The electrooptic crystal 1, which is a KLTN crystal,is cut to obtain a size 6 mm long (z axis)×5 mm wide (y axis)×0.5 mmthick (x axis), and electrodes 5 mm long and 4 mm wide are attached toopposite faces. For the KLTN crystal, electrons are carriers thatcontribute to electrical conduction. Two types of electrode materials,Pt and Ti, are prepared. The KLTN crystal has an electrooptic constantthat is large in the vicinity of a phase transition from a cubic systemto a tetragonal system. The phase transition temperature of the KLTNtemperature is 55° C., and 60° C. is set as the temperature of theelectrooptic crystal 1. When a voltage of 58 V is applied between thepositive and negative electrodes, the polarization direction of outputlight is rotated 90 degrees relative to the polarization direction ofincident light.

FIG. 3 shows the operational characteristics of a light intensitymodulator for the electrode material Pt. It is found that, as thevoltage applied between a positive electrode 2 and a negative electrode3 is increased, the output light is repetitively turned on and off, andthe structure serves as an optical switch. FIG. 4 shows the operationalcharacteristics of a light intensity modulator for the electrodematerial Ti.

It is apparent that as an applied voltage is increased the intensity ofoutput light is changed, and the ratio of the light intensities at theON/OFF time (hereinafter called an extinction ratio) is deteriorated.

When the reason that the extinction ratio is deteriorated for theoptical switch was studied, it was found that when a voltage is appliedto the electrooptic crystal, a space charge is generated inside theelectrooptic crystal, and the electric field is tilted in a direction inwhich the voltage is applied, so that the change in the refractive indexis also tilted. FIG. 5 shows a case wherein the change of the refractiveindex of the light intensity modulator is tilted. Since the electroopticeffect depends on polarization, the change in the refractive index istilted differently for vertically polarized light and horizontallypolarized light. For the KLTN crystal, since the Kerr constant forvertically polarized light and horizontally polarized light iss₁₁:s₁₂=about 10:−1, only the output angle of vertically polarized lightis greatly changed. Therefore, as the voltage V applied to the crystalis increased, the angle of the shifting between the vertically polarizedlight and horizontally polarized light becomes greater, and as shown inFIG. 4, the extinction ratio is deteriorated.

(Principle Behind Generation of a Tilt in an Electric Field)

An explanation will now be given for the principle behind the generationof a tilt in an electric field upon the application of a voltage. When avoltage is applied to an electrooptic crystal, a space charge isgenerated in consonance with the high-field electrical conduction of thecrystal. The high-field electrical conduction is the electricalconduction in an area in a space-charge limited state wherein therelationship between a voltage and a current is outside Ohm's law, and acurrent is non-linearly increased relative to a voltage. In a casewherein a bulk current in the crystal is small, relative to a currentinjected via an electrode, in the area in the space-charge limitedstate, a space charge is produced in the crystal.

FIGS. 6A and 6B show the principle behind the generation of a tilt in anelectric field due to a charge held by the crystal. Both devices shownin FIGS. 6A and 6B include an electrooptic crystal 1 sandwiched by apositive electrode 2 and a negative electrode 3, in parallel. Further, agraph is shown, for which the vertical axis represents a distance fromthe negative electrode 3 to the positive electrode 2, and the horizontalaxis represents the intensity of the electric field held by theelectrooptic crystal 1. In FIG. 6A, a case is shown wherein a spacecharge is not held in the electrooptic crystal 1 and an electric fieldis fixed. In this case, the electric field is fixed for the entire spacebetween the positive electrode 2 and the negative electrode 3. On theother hand, in FIG. 6B, a case is shown wherein a space-charge limitedstate is produced by space charges in the electrooptic crystal 1. In thespace-charge limited state, the electric field is terminated by spacecharges generated in the electrooptic crystal 1, and the electric fielddistribution within the electrooptic crystal 1 is tilted. In accordancewith the composition of the electrooptic crystal 1, the space chargesmay be either positive or negative charges, or may be both.

FIG. 7 shows the principle behind the deflection of light by afieldtilt. In FIG. 7, the x axial direction is the direction of thickness ofthe electrooptic crystal 1 (the direction from the positive electrode 2to the negative electrode 3, or from the negative electrode 3 to thepositive electrode 2 in FIGS. 6A and 6B). A refractive index n(x) thatis linearly changed in the direction of thickness (the x axialdirection) of the electrooptic crystal 1 is defined as n(x)=n+Δn(x),where n denotes a refractive index when x=0 and Δn(x) denotes arefractive index change in the refractive index n at x. In a casewherein a beam having a diameter D in cross section, perpendicular tothe light axis, is passed inside the electrooptic crystal 1, arefractive index difference between the upper end and the lower end ofthe beam is provided by Δn(D)−Δn(0). When L denotes the length of aportion where the beam is passed through and where the inclination ofthe refractive index is present, i.e., the interaction length, after thebeam is propagated through the portion of the length L, a shift 5 occurson an equiphase wave surface 4 between the upper end and lower end ofthe beam. The distance of the shift 5 on the equiphase wave surface 4,between the upper end and the lower end, is provided by the followingexpression.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 8} \right\rbrack \mspace{596mu}} & \; \\{L\frac{{\Delta \; {n(D)}} - {\Delta \; {n(0)}}}{n}} & (7)\end{matrix}$

At this time, when the value of the shift 5 is considerably smaller thanthe diameter in the cross section perpendicular to the light axis of thebeam, inclination θ, in a beam propagation direction 6, is representedby the following expression.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 9} \right\rbrack \mspace{596mu}} & \; \\{\theta^{\prime} = {{{- \frac{L}{n}}\frac{{\Delta \; {n(D)}} - {\Delta \; {n(0)}}}{D}} = {{- \frac{L}{n}}\frac{}{\; x}\Delta \; {n(x)}}}} & (8)\end{matrix}$

When the beam is output at the end face of the electrooptic crystal 1 tothe outside area having a refractive index approximately “1”, the beamis refracted to the boundary plane between the electrooptic crystal 1and the outside, and the total deflection angle, relative to the lightaxis of incident light, is represented by the following expression.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 10} \right\rbrack \mspace{580mu}} & \; \\{\theta = {{- L}\frac{}{x}\Delta \; {n(x)}}} & (9)\end{matrix}$

Here, consider the change in a refractive index based on theelectrooptic effect. The change in a refractive index, based on theelectrooptic effect, is provided by the following respective expressionsfor the linear Pockels effect and the quadratic Kerr effect.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 11} \right\rbrack \mspace{571mu}} & \; \\{{{Pockels}\mspace{14mu} {effect}\text{:}\mspace{14mu} \Delta \; n} = {{- \frac{1}{2}}n^{3}r_{ij}E}} & (10) \\{{{Kerr}\mspace{14mu} {effect}\text{:}\mspace{14mu} \Delta \; n} = {{- \frac{1}{2}}n^{3}s_{ij}E^{2}}} & (11)\end{matrix}$

In a case wherein charges are generated in a crystal, and wherein anelectric field generated by an electrode is terminated using the chargesbefore the field reaches the ground electrode, so that the electricfield is changed in the direction of the thickness of the crystal, whenthe electric field is represented by E(x), a deflection angle θ isobtained by the following expression.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 12} \right\rbrack \mspace{571mu}} & \; \\{{{Pockels}\mspace{14mu} {effect}\text{:}\mspace{14mu} \theta} = {{- \frac{1}{2}}n^{3}r_{ij}L\frac{}{x}{E(x)}}} & (12) \\{{{Kerr}\mspace{14mu} {effect}\text{:}\mspace{14mu} \theta} = {{- \frac{1}{2}}n^{3}s_{ij}L\frac{}{x}\left\{ {E(x)}^{2} \right\}}} & (13)\end{matrix}$

These expressions indicate that, in a case wherein the field effect E(x)is changed, which depends on x, a deflection angle other than 0 isgenerated.

As shown in FIG. 6B, when a voltage V is applied between the positiveelectrode 2 and the grounded negative electrode 3 for the electroopticcrystal 1, which has a thickness d in the space-charge limited state,the space distribution of the electric field E, represented by thefollowing expression, appears.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 13} \right\rbrack \mspace{571mu}} & \; \\{E = {{- \frac{3\; V}{2\; d}}\sqrt{\frac{x + x_{0}}{d}}\frac{1}{\left( {1 + \frac{x_{0}}{d}} \right)^{3/2} - \left( \frac{x_{0}}{d} \right)^{3/2}}}} & (14)\end{matrix}$

Here, x denotes the position relative to the side face, in a directionfrom the negative electrode to the opposite positive electrode, of theelectrooptic crystal 1 that contacts the negative electrode. x₀ is aconstant determined by the materials of the electrooptic crystal and theelectrodes.

Here, when the approximation of the electric field E is calculated usingthe following expression,

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 14} \right\rbrack \mspace{571mu}} & \; \\{E = {{- \frac{3\; V}{2\; d}}\sqrt{\frac{x + x_{0}}{d}}}} & (15)\end{matrix}$

For a case of the linear Pockels effect and the quadratic Kerr effect,the refractive index change Δn that is induced, based on theelectrooptic effect, is provided using the following expression bysubstituting expression (14) into expressions (10) and (11).

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 15} \right\rbrack \mspace{571mu}} & \; \\{{{Pockels}\mspace{14mu} {effect}\text{:}\mspace{14mu} \Delta \; n} = {{{- \frac{1}{2}}n^{3}r_{ij}E} = {{- \frac{3}{4}}n^{3}r_{ij}\frac{V}{d}\sqrt{\frac{x + x_{0}}{d}}}}} & (16) \\{{{Kerr}\mspace{14mu} {effect}\text{:}\mspace{14mu} \Delta \; n} = {{{- \frac{1}{2}}n^{3}s_{ij}E^{2}} = {{- \frac{9}{8}}n^{3}{S_{ij}\left( \frac{V}{d} \right)}^{2}\frac{x + x_{0}}{d}}}} & (17)\end{matrix}$

Therefore, based on expressions (12), (13), (16) and (17), a deflectionangle θ(x) is represented by the following expression.

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 16} \right\rbrack \mspace{571mu}} & \; \\{{{{Pockels}\mspace{14mu} {effect}\text{:}\mspace{14mu} {\theta (x)}} = {{{- L}\frac{}{x}\Delta \; {n(x)}} = {\frac{3}{8}L\; n^{3}{r_{ij}\left( \frac{x + x_{0}}{d} \right)}^{{- 1}/2}\left( \frac{V}{d} \right)}}}} & (18) \\{{{{Kerr}\mspace{14mu} {effect}\text{:}\mspace{14mu} {\theta (x)}} = {{{- L}\frac{}{x}\Delta \; {n(x)}} = {\frac{9}{8}L\; n^{3}\frac{s_{ij}}{d}\left( \frac{V}{d} \right)^{2}}}}} & (19)\end{matrix}$

As described above, by applying a voltage to the electrooptic crystal, aspace charge is generated inside the electrooptic crystal, and the tiltof the electric field occurs in the cross section perpendicular to thelight axis of an incident beam. Because of the tilt of the electricfield, an inclination is generated upon the change in the refractiveindex, and generated on the distribution of the speed at which lightadvances on the cross section perpendicular to the light axis of a beam.As a result, during propagation of light in the crystal, the advancedirection of the light is sequentially changed in accordance with thetilt of the refractive index, and the deflection angle is accumulated.On the other hand, since tilting of the electric field occurs in thedirection in which the voltage is applied, it is found that a shiftangle of beam deflection is generated between vertically polarized lightand horizontally polarized light. Therefore, when the field tilt isincreased, the beam deflection by the light deflector can be efficientlyincreased, or when the field tilt is decreased, the optical phasemodulator can efficiently perform optical phase modulation.

Sequentially, while focusing on expression (14), x₀ is a value thatdepends on the efficiency of an injection of the carrier from theelectrode to the electrooptic crystal, and the smaller x₀ is, the morethe injection efficiency is increased.

If x₀ can be reduced, a field difference between the positive electrodeand the negative electrode is increased, and accordingly, the tilt ofthe refractive index becomes large, so that beam deflection can beefficiently increased. On the other hand, if x₀ can be increased, afield difference between the positive electrode and the negativeelectrode is reduced, and accordingly, the tilt of the refractive indexbecomes small, so that beam deflection can be lowered and the shiftangle between vertically polarized light and horizontally polarizedlight can be reduced.

(Work Function of an Electrode Material)

FIG. 8 is a graph showing a relationship between x₀ and the spacedistribution of the electric field E. Furthermore, FIG. 9 showsdistribution of a refractive index change Δn, based on the Kerr effect.An electrooptic crystal of KLTN crystal having a refractive index of 2.2is employed, and the distance between the positive and negativeelectrodes is set as 0.5 mm, while the electrode length is set as 5.0mm. An applied voltage is 100 V, and the quadratic electrooptic constants_(ij) is 2.85×10¹⁵ m²/V². It is apparent that, when x₀=0, the tilt ofthe refractive index is the largest. At x₀=0 the electrode and theelectrooptic crystal need only provide the ideal ohmic contact, as it isapparent from FIG. 8 that when x=0, the electric field is 0 at thenegative electrode.

The electrooptic crystal that is a KLTN crystal is cut to obtain a size6 mm long×5 mm wide×0.5 mm thick, and electrodes 5 mm long×4 mm wide areattached to opposite faces.

For the KLTN crystal, electrodes are carriers that contribute toelectrical conduction. Four types of electrode materials, Ti, Cr, Au andPt, are prepared. A voltage of 100 V is applied between the positive andnegative electrodes, and the deflection angle of light that isvertically advancing is measured.

FIG. 10 shows a relationship between the work functions of the electrodematerials and the deflection angle. A dotted line A in the graphindicates a deflection angle at the maximum electron injectionefficiency, i.e., a deflection angle at x=0 in FIG. 8. Therefore, in acase wherein Ti or Cr is employed as an electrode material, the idealohmic contact is provided, and the injection efficiency reaches themaximum.

As the work function of the electrode material is increased, the contactbecomes similar to the Schottky contact, and the carrier injectionefficiency is reduced. Based on this, it is preferable in a caseinvolving an optical deflector that the work function of the electrodematerial be smaller than 5.0 eV, in a case wherein electrons arecarriers that contribute to the electrical conduction of theelectrooptic crystal. Therefore, in a case wherein electron holes arecarriers that contribute to the electrical conduction of theelectrooptic crystal, it is preferable that the work function of theelectrode material be equal to or greater than 5.0 eV.

Following this, a voltage of 100 V is applied between the positive andnegative electrodes of the above described electrooptic crystal, whichis a KLTN crystal, and a shift angle between the vertically polarizedlight and horizontally polarized light is measured. FIG. 11 shows arelationship between the work function of the electrode material and ashift angle. A dotted line A in the graph indicates a shift anglebetween vertically polarized light and horizontally polarized light whenthe electron injection efficiency reaches the maximum.

In a case for an optical phase modulator, contrary to the abovedescribed case for the optical deflector, the injection of conductiveelectrons is reduced and a shift angle becomes smaller in a case whereinAu or Pt is employed as an electrode material. Therefore, in a casewherein electrons are carriers that contribute to electrical conductionof the electrooptic crystal, it is preferable that the work function ofthe electrode material be equal to or greater than 5.0 eV. On the otherhand, in a case wherein electron holes are the carriers that contributeto electrical conduction of the electrooptic crystal, it is preferablethat the work function of the electrode material be smaller than 5.0 eV.

As an electrode material for which the work function is smaller than 5.0eV, one of the following materials can be employed: Cs (2.14), Rb(2.16), K (2.3), Sr (2.59), Ba (2.7), Na (2.75), Ca (2.87), Li (2.9), Y(3.1), Sc (3.5), La (3.5), Mg (3.66), As (3.75), Ti (3.84), Hf (3.9), Zr(4.05), Mn (4.1), In (4.12), Ga (4.2), Cd (4.22), Bi (4.22), Ta (4.25),Pb (4.25), Ag (4.26), Al (4.28), V (4.3), Nb (4.3), Ti (4.33), Zn(4.33), Sn (4.42), B (4.45), Hg (4.49), Cr (4.5), Si (4.52), Sb (4.55),W (4.55), Mo (4.6), Cu (4.65), Fe (4.7), Ru (4.71), Os (4.83), Te(4.95), Re (4.96), Be (4.98) and Rh (4.98). A value in parenthesisrepresents a work function. Further, an alloy employing a plurality ofthese materials may be employed. For example, since an electrode formedof a single Ti layer becomes highly resistant through oxidization,generally, an electrode formed by laminating Ti/Pt/Au is employed tobond the Ti layer and the electrooptic crystal. Further, a transparentelectrode made of ITO (Indium Tin Oxide), ZnO, etc., may also beemployed.

As an electrode material having a work function that is equal to orgreater than 5.0 eV, the following material can be employed: Co (5.0),Ge (5.0), Au (5.1), Pd (5.12), Ni (5.15), Ir (5.27), Pt (5.65) or Se(5.9). Furthermore, an alloy employing a plurality of these materialsmay be employed.

(Dielectric Constant of an Electrooptic Crystal)

An electrooptic crystal that is a KLTN crystal is cut to obtain a size 6mm long×5 mm wide×0.5 mm thick, and electrodes of 5 mm long×4 mm wideare attached to opposite faces. Here, Cr is employed as the electrodematerial. FIG. 12 shows a relationship between the relative permittivityof the electrooptic crystal and a deflection angle. An electric field of200 V/mm is applied between the positive and negative electrodes, andthe deflection angle of light that is advancing vertically is measured.At this time, the measurement is performed while the dielectric constantis being changed by altering the temperature of the electroopticcrystal. And the obtained results are shown.

The deflection angle is proportional to the difference in the refractiveindex change between the positive electrode and the negative electrode,i.e., the inclination of a linear line shown in FIG. 9. In a caseconcerning the quadratic electrooptic effect, the refractive indexchange is proportional to the square of the dielectric constant.Therefore, since the deflection angle is proportional to the square ofthe relative permittivity, fitting with the quadratic function isperformed for the measured value shown in FIG. 12, and the obtainedfitting results are also shown. In addition, in a case concerning thequadratic electrooptic effect, since the refractive index change isproportional to the square of the applied voltage, the applied voltageis changed based on the results shown in FIG. 12, and the relativepermittivity dependency of the deflection angle obtained at this time isshown in FIG. 13.

While referring to FIG. 14, the deflection angle of the electroopticdevice according to the mode of the present invention will be comparedwith the deflection angle of a conventional prism. A solid line Aindicates a relative permittivity obtained when an electric field of 500V/mm is applied to the positive and negative electrodes of theelectrooptic crystal, which is the above KLTN crystal, and thetemperature of the electrooptic crystal is changed. A dotted line Bindicates a deflection angle=0.3 mrad when an electric field of 500 V/mmis applied. Therefore, when the electrooptic crystal, which is the KLTNcrystal whose relative permittivity is 500 or higher, is employed in thespace-charge limited state, the same deflection angle can be obtained inthe same applied electric field. Furthermore, as shown in FIG. 14, sincethe relative permittivity dependency of the deflection angle is reducedwhen the relative permittivity exceeds 10000, the relative permittivityof the electrooptic crystal is appropriately equal to or smaller than40000.

In this mode, it is important that one or both of the Pockels effect andthe Kerr effect, which are electrooptic effects of the electroopticcrystal, should be ready to be revealed. In a case wherein a beam is tobe deflected by the Pockels effect, a device that changes the deflectionangle depending on the position of a beam is provided. On the otherhand, in a case wherein a beam is to be deflected using the Kerreffects, a device that fixes the deflection angle, regardless of theposition of the beam, can be provided. Furthermore, in order to increasethe refractive index change, the efficiency of injection of carriersfrom the electrode to the electrooptic crystal should be increased, andan appropriate electrode material should be selected. The presetinvention will be described in detail by employing embodiments; however,the present invention is not limited to the following embodiments.

Embodiment 1

FIG. 15 shows an electrooptic device of a parallel-plate electrode typeaccording to embodiment 1 of the present invention. A KLTN crystal (inK_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃, x=about 0.40 and y=about 0.001) is cut inthe shape of a rectangle, and an electrooptic crystal 11, of which fourfaces are polished, is prepared. A positive electrode 12 and a negativeelectrode 13 made of Ti/Pt/Au are formed on the upper face and the lowerface of the electrooptic crystal 11. The size of the electroopticcrystal 11 is 6 mm (z axis)×5 mm wide (y axis)×0.5 mm thick (x axis),and the size of each electrode is 5 mm long×4 mm wide. In thisspecification, Ti/Pt/Au is used to indicate that Pt and Au arelaminated, in this order, on a lowermost layer of Ti.

The KLTN crystal is an electrooptic crystal having an electroopticconstant that is great near the phase transition from the cubic systemto the tetragonal system. Since the phase transition temperature of theKLTN crystal employed for the embodiment 1 is 55° C., a Peltier deviceand a resistance bulb are employed to set the temperature of this deviceto 60° C., which is higher by about 5° C. than the phase transitiontemperature. Thus, the Kerr effect can be employed as the electroopticeffect of the KLTN crystal. As described above, revealing theelectrooptic effect of the electrooptic crystal depends on thetemperature inside the electrooptic crystal.

Therefore, temperature adjustment means should be provided so that, in acase wherein the environmental temperature inside the electroopticdevice is not a temperature for revealing the electrooptic effect of theelectrooptic crystal, the electrooptic crystal is maintained at adesired temperature.

Light emitted by a He—Ne laser enters from one of the end faces of theelectrooptic crystal 11. So long as light falls within the transmissionarea of the electrooptic crystal 11, an arbitrary wavelength can beapplied. Using a polarization plate and a half-wave plate, the polarizedelement of the incident light is defined only as the element in thepolarization axial direction that is parallel to the electric field. Thedeflection angle of the incident light is changed in consonance with adirect-current voltage applied to the positive electrode 12 and thenegative electrode 13. FIG. 16 shows a relationship between thedeflection angle of a deflected beam and the applied voltage. Themaximum deflection angle of 108 mrad, relative to the applied voltage of+250 V, and the maximum deflection angle of −85 mrad, relative to theapplied voltage of −190 V, are obtained. That is, a deflection angle ofalmost 200 mrad in total can be provided.

FIG. 17 shows a relationship between a current flowing through theelectrooptic crystal 11 and the applied voltage.

Since a current flowing through the electrooptic crystal 11 isnon-linearly changed relative to the direct-current voltage applied tothe positive electrode 12 and the negative electrode 13, it can be saidthat the area of the electrooptic crystal 11 where the electric field isgenerated is in the space-charge limited state.

When the above described simple and symmetrical structure, whichincludes the rectangular electrooptic crystal 11 and the parallel-platepositive electrode 12 and negative electrode 13, is employed, a largedeflection angle that can not be provided by a conventional electroopticcrystal prism can be obtained.

Furthermore, an alternating-current voltage may be applied to theelectrodes instead of a direct-current voltage to change the deflectionangle of a deflected beam in the time-transient manner. The electroopticdevice for the embodiment 1 can be responsive within the range of aresponse frequency that is determined based on the electrooptic constant(see non-patent document 2), and can respond to an alternating-currentvoltage at a high frequency, equal to or higher than 1 kHz.

Conventionally, a KTN (KTa_(1-x)Nb_(x)O₃, 0<x<1) crystal is well knownas a crystal that provides a great electrooptic effect. The KTN crystalis formed like a prism, and when an electric field of 497V/mm is appliedto the KTN prism, a deflection angle of about 10 mrad can be obtained(see non-patent document 3). As for the electrooptic device of theembodiment 1, since the deflection angle of about 100 mrad can beobtained upon the application of a voltage of 250 V (an application ofan electric field of 500 V/mm), the deflection efficiency can beincreased by ten times that obtained by the KTN prism described innon-patent document 3.

Embodiment 2

FIG. 18 shows qn electrooptic device of a horizontal electrode typeaccording to embodiment 2 of the present invention. A KLTN crystal (inK_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃, x=about 0.40 and y=about 0.001) is cutinto the shape of a rectangle, and an electrooptic crystal 21 of whichfour faces are polished is prepared. A positive electrode 22 and anegative electrode 23 made of Ti/Pt/Au are formed on the upper face ofthe electrooptic crystal 21. The size of the electrooptic crystal 21 is6 mm (z axis)×5 mm wide (y axis)×0.5 mm thick (x axis), and the size ofeach electrode is 5 mm long.

The KLTN crystal is an electrooptic crystal that has an electroopticconstant that is great near the phase transition from the cubic systemto the tetragonal system. Since the phase transition temperature of theKLTN crystal employed for the embodiment 2 is 55° C., a Peltier deviceand a resistance bulb are employed to set the temperature of this deviceto 60° C., which is higher by about 5° C. than the phase transitiontemperature. Thus, the Kerr effect can be employed as the electroopticeffect of the KLTN crystal.

Light emitted by a He—Ne laser enters through one of the end faces ofthe electrooptic crystal 21. So long as light falls within thetransmission area of the electrooptic crystal 21, an arbitrarywavelength can be applied. Using a polarization plate and a half-waveplate, the polarized element of the incident light is defined only asthe element in the polarization axial direction that is parallel to thecrystal surface on which the electrode pair is formed. The deflectionangle of the incident light is changed in consonance with adirect-current voltage applied to the positive electrode 22 and thenegative electrode 23. The maximum deflection angle of ±16 mrad relativeto the applied voltage of ±200 V is obtained. That is, a deflectionangle of almost 32 mrad in total can be provided.

FIG. 19 shows a relationship between a current flowing through theelectrooptic crystal 21 and the applied voltage.

Since a current flowing through the electrooptic crystal 21 isnon-linearly changed, relative to the direct-current voltage applied tothe positive electrode 22 and the negative electrode 23, it can be saidthat the area of the electrooptic crystal 21 in which the electric fieldis generated is in the space-charge limited state.

When the above described simple and symmetrical structure, whichincludes the rectangular electrooptic crystal 21 and one pair of thepositive electrode 22 and negative electrode 23 formed on the crystalsurface, is employed, a large deflection angle that can not be providedby a conventional electrooptic crystal prism can be obtained.

In embodiments 1 and 2, one electrode pair of a positive electrode and anegative electrode has been employed. However, a plurality of electrodepairs may be employed so long as a voltage by which a space-chargelimited state is produced in the electrooptic crystal can be applied.One, or two or more alloys are selected from Ti, Pt, Au, Cu, Ag, Cr andPd, and the electrode pairs are formed by the individual alloystructure, or by the alloy lamination structure.

Embodiment 3

FIG. 20 shows a light beam deflector according to embodiment 3 of thepresent invention. For the light beam deflector, a positive electrode 32and a negative electrode 33 are formed on opposite faces of a blockelectrooptic crystal 31. The electrooptic crystal 31, which is a KLTNcrystal, is cut to a size 6 mm long (z axis)×5 mm wide (y axis)×0.5 mmthick (x axis), and electrodes 5 mm long×4 mm wide are attached to theopposite faces. The relative permittivity of the KLTN crystal for thisembodiment is 6300 at the measurement temperature of 20° C. Ti/Pt/Au isemployed as the electrode material. FIG. 21 shows a distribution of therefractive index change in the light beam deflector for the embodiment 3of the present invention. A distribution is shown for the fluctuation,when a voltage applied between the positive and negative electrodes ischanged, of a refractive index of light that vertically advances. Thevertical axis represents the change in a refractive index when novoltage is applied, and the horizontal axis represents a distance fromthe positive electrode.

It is found that as the applied voltage is increased, the refractiveindex near the positive electrode is greatly changed, while therefractive index is nearly unchanged near the negative electrode. Thatis, it is found that the ideal ohmic contact (x₀=0) shown in FIGS. 8 and9 is provided. At the time of the applied voltage of 140 V, theinclination of the refractive index is 1.5×10⁻³ per 1 mm. Since thelength of the electrode in the advancing direction of light is 5 mm, thelight wave plane is inclined at a rate of 7.5×10⁻³ mm for the thicknessof 1 mm. Therefore, at the time of the applied voltage of 140 V, 7.5mrad can be obtained as the deflection angle relative to the light axisof the incident light.

Embodiment 4

FIG. 22 shows the structure of a light intensity modulator according toembodiment 4 of the present invention. An electrode 42 and a negativeelectrode 43 are formed on opposite faces of an electrooptic crystal 41,and a deflector 44 is located on the incidence side of the electroopticcrystal 41, while an analyzer 45 is located on the emittance side. Theelectrooptic crystal 41 is a KLTN crystal (inK_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃, x=0.40 and y=0.001). The positiveelectrode 42 and the negative electrode 43 made of Pt are formed on theupper face and the lower face of the electrooptic crystal 41. The sizeof the electrooptic crystal 41 is 6 mm long (z axis)×5 mm wide (yaxis)×0.5 mm thick (x axis), and the positive electrode 42 and thenegative electrode 43 are 5 mm long×4 mm wide.

The phase transition temperature of the KLTN crystal is 55° C., and thetemperature of the electrooptic crystal 41 is set to 60° C. A He—Nelaser beam is employed as incident light.

When a voltage of 58 V is applied between the positive and negativeelectrodes, the polarization direction of output light is rotated 90degrees relative to the polarization direction of incident light. As thevoltage applied between the positive electrode 42 and the negativeelectrode 43 is increased, turning on and off the output light isrepeated, so that a light intensity modulator that has the operatingcharacteristics shown in FIG. 3 can be obtained.

Embodiment 5

Focusing on expression (19) described above, in a case wherein theelectrooptic device according to the mode of the present invention isemployed as a beam deflection device, the deflection angle isproportional to the device length L of the electrooptic device.Therefore, in order to obtain a large deflection angle, the optical pathof light passing inside the electrooptic device need only be extended.

FIG. 23A shows the structure of a beam deflector according to embodiment5 of the present invention. A KLTN crystal 51, such that x=about 0.40and y=about 0.001 for K_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃, is grown and cut tothe shape of a rectangle, and four faces are polished. A positiveelectrode 52 and a negative electrode 53 made of Ti/Pt/Au are formed onthe upper face and the lower face of the KLTN crystal 51. The size ofthe KLTN crystal 51 is 6 mm long in the light propagation direction (zaxis), 5 mm wide (y axis) and 0.5 mm thick (x axis). The electrodes,formed on the upper and lower faces of the KLTN crystal by vapordeposition, are 5 mm long in the light propagation direction.

Furthermore, mirrors 54 and 55, made of a metal such as Au, or adielectric multilayer film are deposited on the incidence face and theoutput face. Light emitted by a He—Ne laser enters, as incident light,the KLTN crystal 51. FIG. 23B shows a beam propagation path, viewed fromthe plane where the electrode 52 is formed. At this time, the angle inthe direction horizontal to the incidence plane of the KLTN crystal 51is adjusted, so that light passes through the inside of the crystal,reciprocally, 1.5 times, i.e., passes between the incidence plane andthe output plane three times. As a result, the output light is obtained.

The KLTN crystal 51 is an electrooptic crystal having an electroopticconstant that is great near the phase transition from the cubic systemto the tetragonal system. Since the phase transition temperature of theKLTN crystal 51 is 55° C., a Peltier device and a resistance bulb areemployed to set the temperature of this device at 60° C., which ishigher by about 5° C. than the phase transition temperature. Thus, theKerr effect can be employed as the electrooptic effect for the KLTNcrystal 51.

FIG. 24 shows a relationship between the applied voltage of the beamdeflector of embodiment 5 and the deflection angle.

When a voltage of 50 V is applied (an electric field of 100 V/mm isapplied) between the positive electrode 54 and the negative electrode55, light is moved one time between the incidence plane and theemittance plane, and the deflection angle is about 7 mrad. Therefore, asshown in FIG. 23A, about 21 mrad is obtained as a deflection angle Divin the vertical direction (x axial direction) of output light.

Embodiment 6

FIG. 25A shows the structure of a beam deflector according to embodiment6 of the present invention. A KLTN crystal 61, such that x=about 0.40and y=about 0.001 for K_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃, is grown and cut tothe shape of a rectangle, and four faces are polished. A positiveelectrode 62 and a negative electrode 63 (not shown) made of Ti/Pt/Auare formed on the side faces of the KLTN crystal 61. The size of theKLTN crystal 61 is 6 mm long in the light propagation direction (zaxis), 0.5 mm wide (y axis) and 5 mm thick (x axis). The electrodes,formed on the side faces of the KLTN crystal by vapor deposition, are 5mm long in the light propagation direction.

Furthermore, mirrors 64 and 65, made of a metal such as Au, or adielectric multilayer film are deposited on the incidence face and theemittance face. Light emitted by a He—Ne laser enters, as incidentlight, the KLTN crystal 61. FIG. 25B shows a beam propagation path,viewed from the plane where the electrode 62 is formed. At this time,the angle in the direction perpendicular to the incidence plane of theKLTN crystal 61 is adjusted, so that light is output after passingthrough the inside the crystal, reciprocally, 2.5 times, i.e., passesbetween the incidence plane and the emittance plane five times.

The KLTN crystal 61 is an electrooptic crystal having an electroopticconstant that is great near the phase transition from the cubic systemto the tetragonal system. Since the phase transition temperature of theKLTN crystal 20 is 55° C., a Peltier device and a resistance bulb areemployed to set the temperature of this device at 60° C., which ishigher by about 5° C. than the phase transition temperature. Thus, theKerr effect can be employed as the electrooptic effect for the KLTNcrystal 61.

When a voltage of 150 V is applied (an electric field of 200 V/mm isapplied) between the positive electrode 62 and the negative electrode63, light is moved one time between the incidence plane and theemittance plane, and the deflection angle is about 30 mrad. Therefore,about 150 mrad is obtained as a deflection angle 22 in the horizontaldirection (y axial direction) of an output beam 21.

According to embodiment 5 and embodiment 6, since the optical path oflight that passes inside the electrooptic device is extended, a drivevoltage can be set to 1/√n (n: passage count), compared with a casewherein, one time only, light passes through the inside the electroopticdevice having the same device length. When the drive voltage is thesame, the device length of the electrooptic device can be reduced to1/n. As the device length is shorter, the capacitance element becomessmaller relative to the voltage to be applied, and the speed of thedeflection operation can be increased. Furthermore, the quadraticelectrooptic constant s_(ij) is greater for a case s₁₁ wherein the lightpolarization direction is parallel to the applied electric field thanfor a case s₁₁ wherein the light polarization direction is perpendicularto the applied electric field. Therefore, when the number of timesreciprocation is increased, a satisfactory deflection angle can beobtained.

It should be noted that mirrors may be provided by forming a metal or adielectric multilayer film through vapor deposition or sputtering, or byusing total reflection on the end face of the crystal.

Embodiment 7

FIG. 26 shows the structure of a beam deflector according to embodiment7 of the present invention. A KLTN crystal 71 such that x=about 0.40 andy=about 0.001, for K_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃, is grown and cut tothe shape of a rectangle, and four faces are polished. A positiveelectrode 72 and a negative electrode 73 made of Ti/Pt/Au are formed onthe upper face and the lower face of the KLTN crystal 71. The positiveelectrode 72 and the negative electrode 73 serve as vertical deflectionelectrodes.

Further, a positive electrode 74 and a negative electrode 75, whichserve as horizontal deflection electrodes, are formed on the side facesof the KLTN crystal 71. Furthermore, mirrors 76 and 77 made of metal ora dielectric multilayer film are deposited on the incidence face and theemittance face.

Light emitted by a He—Ne laser enters, as incident light, the KLTNcrystal 71. At this time, the angles in the directions horizontal andperpendicular to the incidence plane of the KLTN crystal 71 areadjusted, so that light is output after it has passed through the insidethe crystal, reciprocally, 2.5 times, i.e., is passed between theincidence plane and the emittance plane five times. As a result, as wellas in embodiment 5 and embodiment 6, the output light can be deflectedhorizontally and vertically.

Embodiment 8

FIG. 27 shows a two-dimensional beam deflector according to embodiment 8of the present invention. Electrooptic crystals having a size 6 mmlong×5 mm wide×0.5 mm thick are cut from a KLTN crystal. Electrodes 5 mmlong×4 mm wide are attached to opposite faces 82 and 83, and 92 and 93of electrooptic crystals 81 and 91, respectively. The phase transitiontemperature of the KLTN crystal is 55° C., and the temperature of theelectrooptic crystals 81 and 91 is set at 60° C. Cr is employed as theelectrode material. The electrooptic crystals 81 and 91 are located onthe optical path, so that the direction in which the electric field isto be applied to the electrooptic crystal 81 is at a right angle to thedirection in which the electric field is to be applied to theelectrooptic crystal 91. A half-wave plate 101, made of rock crystal, isinserted into the optical path between the electrooptic crystals 81 and91, so that light output by the electrooptic crystal 81 is to be rotated90 degrees and enter the electrooptic crystal 91.

As described above, the deflection efficiency depends on the fielddirection of light, and reaches the maximum when the field direction forlight is parallel to the space field direction due to the appliedvoltage. Therefore, based on the polarization dependency, the tilt ofthe refractive index change is different between vertically polarizedlight and horizontally polarized light. According to the KLTN crystal,since s₁₁:s₁₂=about 10:−1 is the Kerr constant relative to verticallypolarized light (the y axial direction in FIG. 27) and horizontallypolarized light (the x axial direction in FIG. 27), only the outputangle of vertically polarized light is greatly changed.

Thus, in the electrooptic crystal 81, light is deflected in the y axialdirection by applying an electric field in parallel to verticallypolarized light, and the deflected light is rotated 90 degrees by thehalf-wave plate 101. And in the electrooptic crystal 91, the resultantlight is deflected in the x axial direction by applying an electricfield that is parallel to horizontally polarized light. As a result,efficient two-dimensional deflection is enabled.

Embodiment 9

FIG. 28 shows the structure of a two-dimensional beam deflectoraccording to embodiment 9 of the present invention. An electroopticcrystal, which is a KLTN crystal, is cut out to obtain a size 20 mmlong×5 mm wide×5 mm thick, and is shaved to obtain an octagonal prismwhose longitudinal cross section is an octagon. Three pairs ofelectrodes 5 mm long×1.5 mm wide are attached to opposite faces of anelectrooptic crystal 111. The phase transition temperature of the KLTNcrystal is 55° C., and the temperature of the electrooptic crystal 111is set at 60° C. As for the electrodes, beginning with the lightincidence side, electrodes 122 and 123 for a first deflector, electrodes132 and 133 for a half-wave plate and electrodes 142 and 143 for asecond deflector are sequentially attached.

Here, Cr is employed as the electrode material for the electrodes 122and 123 and the electrodes 142 and 143, and Pt is employed as theelectrode material for the electrodes 132 and 133. For the deflectorelectrodes, the electron injection efficiency must be increased in orderto improve the deflection efficiency, and an electrode material thatwill serve as an ohmic contact should be selected. On the other hand,for the electrodes for a half-wave plate, since simply the rotation of apolarized wave is required, no occurrence of deflection is preferable.Therefore, the electron injection efficiency must be reduced, and anelectrode material that serves as a Schottky contact should be selected.

With this arrangement, as well as in embodiment 8, light is deflected bythe first deflector in the y axial direction, and the deflected light isrotated 90 degrees by the half-wave plate. And the resultant light isdeflected by the second deflector in the x axial direction. Since asdescribed above a single KLTN crystal is employed to provide threefunctions, i.e., a vertical deflection function, a horizontal deflectionfunction and a half-wave plate, a KLTN crystal for a cubic system ispreferable.

Embodiment 10

FIG. 29A shows the structure of a two-dimensional beam deflectoraccording to embodiment 10 of the present invention.

An electrooptic crystal 201, which is a KLTN crystal, is cut to obtain asize 10 mm long (z axis)×5 mm wide (y axis)×0.5 mm thick (x axis). Twopairs of electrodes are attached to opposite faces of the electroopticcrystal 201. Beginning from the light incidence side, electrodes 202 and203 for a first deflector and electrodes 204 and 205 for a seconddeflector are attached. There is no problem in replacing this order.

The phase transition temperature of the KLTN crystal is 55° C., and thetemperature of the electrooptic crystal 201 is set at 60° C.

The electrodes 202 and 203 of the first deflector are shaped likeright-angled triangles employing, as the base, the side near theincidence of light. One of the base angles is a right angle, the otherbase angle φ is 30 degrees, the length of the base is 4 mm, the heightis 3 mm, and the length of the hypotenuse is 5 mm. For the electrodes202 and 203 of the first deflector, an electrode material containing Ptis employed, so that a Schottky contact is obtained. The electrodes 204and 205 for the second deflector are rectangular electrodes 5 mm long×4mm wide. For the electrodes 204 and 205 of the second deflector, anelectrode material containing Ti is employed, so that an ohmic contactis obtained.

Since, through the electrooptic effect provided by the KLTN crystal, therefractive index is uniformly changed in the portion in which theelectrodes 202 and 203 for the first deflector are formed, this portionserves as a prism that acts on incident light. When n denotes therefractive index of the electrooptic crystal 201, S_(ij) denotes anelectrooptic constant, d denotes a thickness, V denotes an appliedvoltage, and φ denotes the base angle of one of the electrodes 202 and203 for the first deflector, the deflection angle ψ is represented by

$\begin{matrix}{\left\lbrack {{Expression}\mspace{14mu} 17} \right\rbrack \mspace{571mu}} & \; \\{\psi = {\frac{1}{2}n^{3}{S_{ij}\left( \frac{V}{d} \right)}^{2}\tan \; \varphi}} & (20)\end{matrix}$

and light is deflected in the y axial direction.

As well as in embodiment 3, the ideal ohmic contact is provided in theportion wherein are located the electrodes 204 and 205 for the seconddeflector, and the charge injection efficiency is the maximum.Therefore, since output light is deflected in the x axial direction,efficient two-dimensional deflection is enabled.

Embodiment 11

At present, a three-axis lens actuator is employed for a servo mechanismemployed for an optical recording/reproduction apparatus used for DVDs.The actuator employs a moving coil motor to drive a wire that holds anobject lens. The Lorentz force that acts on charges that move throughmagnetic fluxes is employed as the driving principle of the moving coilmotor.

Since this actuator mechanism is a mechanically operated type, manyinherent vibration modes are included. In a case wherein the actuator isdriven at a frequency equal to the inherent vibrations, an inherent modeis driven and resonance occurs.

The lowest order resonance of the actuator can be avoided through thecontrol exercised by a control system. However, it is difficult to avoidthe affect by a higher-order resonance, and as a result, a high-orderresonance is not stabilized by the control system, and accuratepositioning is difficult. Therefore, the above described light beamdeflector is employed to provide an optical pickup apparatus thatcomprises a servo mechanism that does not include a mechanically drivenportion.

FIG. 30 shows the arrangement of an optical pickup apparatus accordingto embodiment 11 of the present invention. The optical pickup apparatusemploys the light beam deflector shown in FIG. 20 for the embodiment 3,and recording media are DVDs and HD-DVDs. A light beam emitted by a DVDlaser diode (LD) 311, which is a light source, is passed through a halfmirror 312 and a collimating lens 313 and enters an optical deflectiondevice 314. Based on a tracking signal reflected by a disk 316, acontroller (not shown) provides feedback control for the deflectionangle at the optical deflection device 314. The light beam output by theoptical deflection device 314 is transmitted via an object lens 315 toirradiate the disk 316.

An optical signal reflected by the disk 316 passes through the halfmirror 322 and a detection lens 323, and enters a photodiode (PD) 324.Further, an HD-DVD laser diode (LD) 321 is optically coupled with thehalf mirror 322.

As described above, according to the conventional method, an object lensis driven by an actuator. Since the optical deflection device of thismode does not include a moving portion, resonance due to the driving ofthe main body does not occur.

On the other hand, since a material that provides the quadraticelectrooptic effect is employed, the resonance phenomenon occurs in thedevice material due to an electrostriction effect. Since this phenomenondepends on the size and shape of the material, the occurrence of thephenomenon can be controlled by breaking the symmetry of the shape. Inthis mode, the band of the servo has been defined as 1 MHz, at which thestable operation can be satisfactorily performed and opticalrecording/reproduction of high quality enabled. Since a voltage at thistime for driving the optical deflection device to deflect a light beamfalls within the range of ±12 V, the optical deflection device can bedriven at a voltage that is satisfactory for practical use.

Further, the optical deflection device has been located between thecollimating lens 313 and the object lens 315. However, so long as thelocation is along the optical path between the light source and arecording medium, the optical deflection device may be arranged at otherportions of the optical pickup apparatus to obtain the same effects.Furthermore, since the light transmission wavelength of the opticaldeflection device is within a range of from 400 nm to 4000 nm, thedevice can be applied for an optical pickup apparatus that employs aplurality of wavelengths of visible light.

The optical pickup apparatus that employs the light deflection device ofthis mode has a band wherein appropriate control can still be exercisedfor a case wherein recording and reproduction at a high density, such asa 1TB class, is performed. Therefore, when the apparatus is employed foran HD-DVD or Blu-ray that requires higher density recording, greatereffects can be anticipated, and higher-density recording/reproductioncan be provided.

Embodiment 12

For performing printing, a laser printer radiates a photosensitivemember with a laser beam, attaches toner to the exposed portion, andtransfers the toner to a recording sheet. At this time, it is requiredthat a laser beam be repetitively deflected, at least in the directionof one axis.

The above described technique for rotating a polygon mirror is employedas a light deflection technique. For an improvement in the printingspeed of a printer, a higher-speed optical deflection technique isrequested. Thus, the above described light beam deflector is employed toprovide a fast laser printer.

FIG. 31A shows the structure of a laser printer according to the mode ofthe present invention. The illustrated laser printer employs the lightbeam deflector shown in FIG. 20 for embodiment 3. For comparison, aconventional laser printer is shown in FIG. 31B. In the laser printer, acharging unit 412, a developing unit 415, a transfer unit 414 and afixing unit 413 are arranged around the periphery of a cylindricalphotosensitive drum 411, which is a photosensitive member. Thephotosensitive drum 411 charged by the charging unit 412 is irradiatedby a laser beam, and toner is attached to the exposed portion by thedeveloping unit 415. Then, a toner image is transferred to a recordingsheet 416 by the transfer unit 414, and is fixed by the fixing unit 413.

As shown in FIG. 31B, in a conventional laser printer, a laser beamemitted by a laser diode 431 is collimated by a collimating lens 432,and is reflected by a polygon mirror 433. The laser beam is deflected byrotating the polygon mirror 433, and the deflected beam is transmittedvia a lens 434 to radiate a photosensitive member 411. As shown in FIG.31A, in the laser printer of this mode, a laser beam emitted by a laserdiode 421, which is a light source, is collimated by a collimating lens422, and enters an optical deflection device 423. The laser beamdeflected by the optical deflection device 423 is transmitted via a lens424 to radiate the photosensitive member 411.

For the optical deflection device 423 located on the optical pathextending between the laser diode 421 and the photosensitive member 411,four elements are employed in order to scan the entire photosensitivemember 411 in the scanning direction.

Since the power consumed by one element is equal to or lower than 1 mW,power consumption is reduced compared with the conventional laserprinter. Further, since the chip size of the optical deflection deviceis so small that it can be integrated with a laser diode, downsizing isenabled, unlike the polygon mirror.

The optical deflection speed of the optical deflection device 423 is 1MHz, and the maximum rotation frequency of the polygon mirror 433 is 10kHz (60000 rpm). Assuming that the polygon mirror 433 has ten mirrorplanes, the laser printer for this mode can provide ten times the speed.For example, a conventional fast laser printer that employs a pluralityof laser beams has a printing capability of about 40 sheets per minute,while the laser printer of this embodiment can obtain a printingcapability of about 300 sheets per minute.

Furthermore, two optical deflection devices, the field directions ofwhich intersect each other, are located and a half-wave plate isarranged between the two optical deflection devices. When the twooptical deflection devices are controlled separately, two-dimensionalscanning by a laser beam can be performed. Since the speed of theexposing of the photosensitive member can be remarkably increasedthrough two-dimensional scanning, a printing capability of about 500sheets per minute can be obtained. Further, when one more opticaldeflection device is located between the optical deflection devices andthe laser diode, and when light is deflected outside the optical pathused for exposure by a laser beam, a light ON/OFF function can beadditionally provided.

1. An electrooptic device comprising: an electrooptic crystal having anelectrooptic effect; a electrode pair of a positive electrode and anegative electrode, for generating an electric field inside theelectrooptic crystal; and a power source for applying a voltage to theelectrode pair so as to generate a space charge inside the electroopticcrystal.
 2. An electrooptic device according to claim 1, wherein thepositive electrode of the electrode pair is located on one of two facesof the electrooptic crystal that are opposite each other, and thenegative electrode is located on the other face of the two that areopposite each other.
 3. An electrooptic device according to claim 1,wherein the positive electrode and the negative electrode of theelectrode pair are located, at an interval, on the same face of theelectrooptic crystal.
 4. An electrooptic device according to claim 1,wherein an electrooptic effect that is revealed on the electroopticcrystal is the Pockels effect.
 5. An electrooptic device according toclaim 1, wherein an electrooptic effect that is revealed on theelectrooptic crystal is the Kerr effect.
 6. An electrooptic deviceaccording to claim 1, wherein electrooptic effects that are revealed onthe electrooptic crystal are both the Pockels effect and the Kerreffect.
 7. An electrooptic device according to claim 1, wherein theelectrooptic crystal is one of K_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃ (0<x<1,0<y<1), LiNbO₃, LiTaO₃, LiIO₃, KNbO₃, KTiOPO₄, BaTiO₃, SrTiO₃,Ba_(1-x)Sr_(x)TiO₃ (0<x<1), Ba_(1-x)Sr_(x)Nb₂O₆ (0<x<1),Sr_(0.75)Ba_(0.25)Nb₂O₆, Pb_(1-y)La_(y)Ti_(1-x)Zr_(x)O₃ (0<x<1, 0<y<1),Pb(Mg_(1/3)Nb_(2/3))O₃—PbTiO₃, KH₂PO₄, KD₂PO₄, (NH₄)H₂PO₄, BaB₂O₄,LiB₃O₅, CsLiB₆O₁₀, GaAs, CdTe, GaP, ZnS, ZnSe, ZnTe, CdS, CdSe and ZnO.8. A beam deflector comprising: an electrooptic crystal having anelectrooptic effect; and an electrode pair of a positive electrode and anegative electrode, which are formed of a material that serves as anohmic contact relative to a carrier that contributes to electricalconduction of the electrooptic crystal, and which generate an electricfield inside the electrooptic crystal.
 9. A beam deflector according toclaim 8, wherein a relative permittivity of the electrooptic crystal is500 or higher to 40000 or lower.
 10. A beam deflector according to claim9, wherein the electrooptic crystal is K_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃(0<x<1, 0<y<1).
 11. A beam deflector according to claim 10, wherein,when electrons are carriers that contribute to electrical conduction ofthe electrooptic crystal, a work function of a material used for theelectrode pair is smaller than 5.0 eV.
 12. A beam deflector according toclaim 11, wherein a material for the electrode pair is one of Cs, Rb, K,Sr, Ba, Na, Ca, Li, Y, Sc, La, Mg, As, Ti, Hf, Zr, Mn, In, Ga, Cd, Bi,Ta, Pb, Ag, Al, V, Nb, Ti, Zn, Sn, B, Hg, Cr, Si, Sb, W, Mo, Cu, Fe, Ru,Os, Te, Re, Be and Rh.
 13. A beam deflector according to claim 11,wherein a material for the electrode pair is either ITO or ZnO.
 14. Abeam deflector according to claim 10, wherein, when electron holes arecarriers that contribute to electrical conduction of the electroopticcrystal, a work function of a material used for the electrode pair isequal to or greater than 5.0 eV.
 15. A beam deflector according to claim14, wherein a material for the electrode pair is one of Co, Ge, Au, Pd,Ni, Ir, Pt and Se.
 16. A beam deflector according to claim 9, whereinthe electrooptic crystal is one of Ba_(1-x)Sr_(x)TiO₃ (0<x<1),Sr_(0.75)Ba_(0.25)Nb₂O₆ and Pb_(1-y)La_(y)Ti_(1-x)Zr_(x)O₃ (0<x<1,0<y<1).
 17. A light intensity modulator comprising: an electroopticcrystal having an electrooptic effect; a polarizer arranged on anincident-side light axis of the electrooptic crystal; an analyzerarranged on an output-side light axis of the electrooptic crystal; andan electrode pair of a positive electrode and a negative electrode,which are formed of a material that serves as a Schottky contactrelative to a carrier that contributes to electrical conduction by theelectrooptic crystal, and which generate an electric field inside theelectrooptic crystal.
 18. A light intensity modulator according to claim17, wherein the electrooptic crystal is K_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃(0<x<1, 0<y<1).
 19. A light intensity modulator according to claim 18,wherein, when electrons are carriers that contribute to electricalconduction of the electrooptic crystal, a work function of a materialused for the electrode pair is equal to or greater than 5.0 eV.
 20. Alight intensity modulator according to claim 19, wherein a material forthe electrode pair is one of Co, Ge, Au, Pd, Ni, Ir, Pt and Se.
 21. Alight intensity modulator according to claim 18, wherein, when electronholes are carriers that contribute to electrical conduction of theelectrooptic crystal, a work function of a material used for theelectrode pair is smaller than 5.0 eV.
 22. A light intensity modulatoraccording to claim 21, wherein a material for the electrode pair is oneof Cs, Rb, K, Sr, Ba, Na, Ca, Li, Y, Sc, La, Mg, As, Ti, Hf, Zr, Mn, In,Ga, Cd, Bi, Ta, Pb, Ag, Al, V, Nb, Ti, Zn, Sn, B, Hg, Cr, Si, Sb, W, Mo,Cu, Fe, Ru, Os, Te, Re, Be and Rh.
 23. A light intensity modulatoraccording to claim 21, wherein a material for the electrode pair iseither ITO or ZnO.
 24. A light intensity modulator according to claim17, wherein the electrooptic crystal is one of LiNbO₃, LiTaO₃, LiIO₃,KNbO₃, KTiOPO₄, BaTiO₃, SrTiO₃, Ba_(1-x)Sr_(x)TiO₃ (0<x<1),Ba_(1-x)Sr_(x)Nb₂O₆ (0<x<1), Sr_(0.75)Ba_(0.25)Nb₂O₆,Pb_(1-y)La_(y)Ti_(1-x)Zr_(x)O₃ (0<x<1, 0<y<1),Pb(Mg_(1/3)Nb_(2/3))O₃—PbTiO₃, KH₂PO₄, KD₂PO₄, (NH₄)H₂PO₄, BaB₂O₄,LiB₃O₅, CsLiB₆O₁₀, GaAs, CdTe, GaP, ZnS, ZnSe, ZnTe, CdS and CdSe.
 25. Abeam deflector comprising: an electrooptic crystal having anelectrooptic effect; an electrode pair of a positive electrode and anegative electrode for generating an electric field inside theelectrooptic crystal, which are formed opposite each other on parallelfaces of the electrooptic crystal; and mirror faces formed on anincidence plane and an emittance plane of light that entersperpendicular to the direction of the electric field.
 26. A beamdeflector according to claim 25, wherein a relative permittivity of theelectrooptic crystal is 500 or higher to 40000 or lower.
 27. A beamdeflector according to claim 26, wherein the electrooptic crystal is oneof K_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃ (0<x<1, 0<y<1), Ba_(1-x)Sr_(x)TiO₃(0<x<1), Sr_(0.75)Ba_(0.25)Nb₂O₆ and Pb_(1-y)La_(y)Ti_(1-x)Zr_(x)O₃(0<x<1, 0<y<1).
 28. An optical deflector comprising: a firstelectrooptic crystal having an electrooptic effect, for which anelectrode pair is formed opposite each other on faces that are parallelto each other; a second electrooptic crystal having an electroopticeffect, for which an electrode pair is formed opposite each other onfaces that are parallel to each other, and for which a direction of anelectric field applied by the electrode pair is perpendicular to adirection of an electric field of the first electrooptic crystal; and ahalf-wave plate located on an optical path extending between the firstand second electrooptic crystals.
 29. An optical deflector comprising:an electrooptic crystal having an electrooptic effect, a longitudinalcross section of which is octagonal; a first electrode pair of apositive electrode and a negative electrode, for generating an electricfield inside the electrooptic crystal, that are formed opposite eachother on longitudinal faces that are parallel to each other; a secondelectrode pair for applying an electric field in a direction at a rightangle to a direction of an electric field applied by the first electrodepair; and a third electrode pair that is formed opposite, on parallelfaces, between the first and second electrode pairs and that applies anelectric field in a direction at an angle of 45 degrees relative to thedirection of an electric field applied by the first and second electrodepairs.
 30. An optical deflector according to claim 29, wherein theelectrooptic crystal is K_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃ (0<x<1, 0<y<1).31. An optical deflector according to claim 30, wherein, when electronsare carriers that contribute to electrical conduction of theelectrooptic crystal, a work function of a material used for the firstand second electrode pairs is smaller than 5.0 eV, and a work functionof a material used for the third electrode pair is equal to or greaterthan 5.0 eV.
 32. An optical deflector according to claim 31, wherein amaterial for the first and second electrode pairs is one of Cs, Rb, K,Sr, Ba, Na, Ca, Li, Y, Sc, La, Mg, As, Ti, Hf, Zr, Mn, In, Ga, Cd, Bi,Ta, Pb, Ag, Al, V, Nb, Ti, Zn, Sn, B, Hg, Cr, Si, Sb, W, Mo, Cu, Fe, Ru,Os, Te, Re, Be and Rh.
 33. An optical deflector according to claim 31,wherein a material for the first and second electrode pairs is eitherITO or ZnO.
 34. An optical deflector according to claim 31, wherein amaterial for the third electrode pair is one of Co, Ge, Au, Pd, Ni, Ir,Pt and Se.
 35. An optical deflector according to claim 30, wherein, whenelectron holes are carriers that contribute to electrical conduction ofthe electrooptic crystal, a work function of a material used for thefirst and second electrode pairs is equal to or greater than 5.0 eV, anda work function of a material used for the third electrode pair issmaller than 5.0 eV.
 36. An optical deflector according to claim 29,wherein the electrooptic crystal is one of LiNbO₃, LiTaO₃, LiIO₃, KNbO₃,KTiOPO₄, BaTiO₃, SrTiO₃, Ba_(1-x)Sr_(x)TiO₃ (0<x<1), Ba_(1-x)Sr_(x)Nb₂O₆(0<x<1), Sr_(0.75)Ba_(0.25)Nb₂O₆, Pb_(1-y)La_(y)Ti_(1-x)Zr_(x)O₃ (0<x<1,0<y<1), Pb(Mg_(1/3)Nb_(2/3))O₃—PbTiO₃, KH₂PO₄, KD₂PO₄, (NH₄)H₂PO₄,BaB₂O₄, LiB₃O₅, CsLiB₆O₁₀, GaAs, CdTe, GaP, ZnS, ZnSe, ZnTe, CdS andCdSe.
 37. An optical deflector comprising: an electrooptic crystalhaving an electrooptic effect; a first electrode pair of a positiveelectrode and a negative electrode, for generating an electric fieldinside the electrooptic crystal, that are formed opposite each other onlongitudinal faces parallel to each other, and that are made of amaterial that serves as a Schottky contact relative to a carrier thatcontributes to electrical conduction of the electrooptic crystal and areshaped like right-angled triangles, such that sides near the lightincidence are employed as the bases and one of the base angles is aright angle; and a second electrode pair of a positive electrode and anegative electrode, for generating an electric field inside theelectrooptic crystal, that are formed opposite each other onlongitudinal faces parallel to each other, and that are made of amaterial that serves as an ohmic contact relative to a carrier thatcontributes to the electrical conduction of the electrooptic crystal.38. An optical deflector according to claim 37, wherein the electroopticcrystal is K_(1-y)Li_(y)Ta_(1-x)Nb_(x)O₃ (0<x<1, 0<y<1).
 39. An opticaldeflector according to claim 38, wherein, when electrons are carriersthat contribute to electrical conduction of the electrooptic crystal, awork function of a material used for the first electrode pair is equalto or greater than 5.0 eV, and a work function of a material used forthe second electrode pair is smaller than 5.0 eV.
 40. An opticaldeflector according to claim 39, wherein a material for the firstelectrode pair is one of Co, Ge, Au, Pd, Ni, Ir, Pt and Se.
 41. Anoptical deflector according to claim 39, wherein a material for thefirst electrode pair is one of Cs, Rb, K, Sr, Ba, Na, Ca, Li, Y, Sc, La,Mg, As, Ti, Hf, Zr, Mn, In, Ga, Cd, Bi, Ta, Pb, Ag, Al, V, Nb, Ti, Zn,Sn, B, Hg, Cr, Si, Sb, W, Mo, Cu, Fe, Ru, Os, Te, Re, Be and Rh.
 42. Anoptical deflector according to claim 39, wherein a material for thesecond electrode pair is either ITO or ZnO.
 43. An optical deflectoraccording to claim 38, wherein, when electron holes are carriers thatcontribute to electrical conduction of the electrooptic crystal, a workfunction of a material used for the first electrode pair is smaller than5.0 eV, and a work function of a material used for the second electrodepair is equal to or greater than 5.0 eV.
 44. An optical deflectoraccording to claim 37, wherein the electrooptic crystal is one ofLiNbO₃, LiTaO₃, LiIO₃, KNbO₃, KTiOPO₄, BaTiO₃, SrTiO₃,Ba_(1-x)Sr_(x)TiO₃ (0<x<1), Ba_(1-x)Sr_(x)Nb₂O₆ (0<x<1),Sr_(0.75)Ba_(0.25)Nb₂O₆, Pb_(1-y)La_(y)Ti_(1-x)Zr_(x)O₃ (0<x<1, 0<y<1),Pb(Mg_(1/3)Nb_(2/3))O₃—PbTiO₃, KH₂PO₄, KD₂PO₄, (NH₄)H₂PO₄, BaB₂O₄,LiB₃O₅, CsLiB₆O₁₀, GaAs, CdTe, GaP, ZnS, ZnSe, ZnTe, CdS and CdSe. 45.An optical pickup apparatus comprising: a light source for outputting alaser beam to irradiate a recording medium; and an optical deflectiondevice, which includes an electrooptic crystal having an electroopticeffect and an electrode pair of a positive electrode and a negativeelectrode for generating an electric field inside the electroopticcrystal, and which is located on an optical path extending between thelight source and the recording medium to control deflection of the laserbeam.
 46. A laser printer comprising: a light source for outputting alaser beam to irradiate a photosensitive member; and an opticaldeflection device, which includes an electrooptic crystal having anelectrooptic effect and an electrode pair of a positive electrode and anegative electrode for generating an electric field inside theelectrooptic crystal, and which is located on an optical path extendingbetween the light source and the photosensitive member to controldeflection of the laser beam.